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dc.contributor.authorDjikeng, Albert
dc.contributor.authorShadaram, Mehdi
dc.date.accessioned2020-06-10T19:26:59Z
dc.date.available2020-06-10T19:26:59Z
dc.date.issued2019
dc.identifier.issn2470-3958
dc.identifier.urihttps://hdl.handle.net/20.500.12588/82
dc.description.abstractOne fundamental building block of integrated photonics is the fiber-to-chip grating coupler. The grating coupling method is mainly hindered by the vast difference in mode areas between the fiber cable and the waveguide, which causes low coupling efficiency. Other challenges include limited bandwidth, backward scattered light, and mode mismatch. Couplers based on a silicon nitride (SiNx) material platform can achieve wider bandwidths and better coupling efficiency than silicon-based couplers. In this research, we identify methods to increase the 1dB optical bandwidth of a SiNx on silicon-on-insulator (SOI) grating coupler while maintaining a coupling efficiency greater than 40% in efforts to develop a high-capacity grating coupler for telecommunications applications. Methods such as asymmetric grating trenches for low back reflections and optimization of grating dimensions are examined. The optimized structures yielded results up to 28.57 nm for 1dB bandwidth and a maximum coupling efficiency of 49.77%.en_US
dc.language.isoen_USen_US
dc.publisherOffice of the Vice President for Researchen_US
dc.relation.ispartofseriesThe UTSA Journal of Undergraduate Research and Scholarly Work;Volume 5
dc.subjectPhotonicsen_US
dc.subjectfiber optic communicationsen_US
dc.subjectgrating coupleren_US
dc.subjectphotonic integrated circuitsen_US
dc.titleTheoretical Analysis and Design of a High Bandwidth SiNx on SOI Grating Coupler for Telecommunications Applicationen_US
dc.typeArticleen_US
dc.description.departmentCivil and Environmental Engineering
dc.description.departmentElectrical and Computer Engineering


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